In traditional low-voltage 415V power quality systems, switching devices commonly use siliconb ased IGBT. The new generation of silicon carbide (SiC) materials has numerous advantages over silicon (Si)-based materials, including lower losses and smaller size. At the same time, with technological advancements, the power capacity of SiC MOS has gradually expanded and has begun to be widely applied in high-power fields such as new energy vehicles, energy storage, and power quality management.

        With the large-scale release of domestic SiC production capacity in 2025 and the reduction in SiC device costs, iKonMac has adopted the industry’s most advanced active clamping technology, softswitching technology, and proprietary innovative technology, combined with SiC devices, to launch the 415V(304V-456V) SiC power quality device. Compared to the current silicon-based IGBT products in the industry, it has twice the reliability and response speed, and the power module size has been reduced by 46%.